Quenched magnetic moment in Mn-doped amorphous Si films

Li Zeng; E. Helgren; M. Rahimi; F. Hellman; R. Islam; B. J. Wilkens; Robert Culbertson; David Smith

doi:10.1103/PhysRevB.77.073306

Quenched magnetic moment in Mn-doped amorphous Si films

Li Zeng, E. Helgren, M. Rahimi, F. Hellman, R. Islam, B. J. Wilkens, Robert Culbertson, David Smith

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Abstract

The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

Original language	English (US)
Article number	073306
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.77.073306
State	Published - Mar 6 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.",

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T1 - Quenched magnetic moment in Mn-doped amorphous Si films

AU - Zeng, Li

AU - Helgren, E.

AU - Rahimi, M.

AU - Hellman, F.

AU - Islam, R.

AU - Wilkens, B. J.

AU - Culbertson, Robert

AU - Smith, David

PY - 2008/3/6

Y1 - 2008/3/6

N2 - The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

AB - The absence of a Mn local moment was observed in Mn-doped amorphous silicon (a- Mnx Si1-x) films. The magnetic susceptibility obeys the Curie-Weiss law for a wide range of x (5× 10-3 up to 0.175) but with extremely small moment. Magnetization measurements suggest that this behavior occurs because only a small percentage of Mn (Mn2+ states with J=S=5/2) contribute to the magnetization. Thus, the magnetic moments are quenched for the majority of Mn atoms, contrary to the general belief of the existence of a localized Mn moment in Si. X-ray absorption spectroscopy suggests that the quenching of Mn moments is attributed to the formation of an itinerant but Anderson-localized impurity band, forming at x as low as 5× 10-3.

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Quenched magnetic moment in Mn-doped amorphous Si films

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