@inproceedings{383481b99262414a96193781be44e7b5,
title = "Quasi 1D multi-physics modeling of silicon heterojunction solar cells",
abstract = "Silicon based technology continues to mature and move steadily towards the auger limited maximum efficiency (∼29%). In particular silicon heterojunction technology currently holds the world record for silicon based single junction cells. Optimization of heterojunction solar cells now requires a concentrated and deep understanding of the physics of transport. In this paper we present a multi-physics/multiscale approach to understanding and analyzing transport in silicon heterojunction solar cells. We self-consistently couple a traditional drift-diffusion model to an ensemble Monte Carlo and kinetic Monte Carlo to create a multiscale solver that is capable of including high field effects present at the a-Si/c-Si heterointerface and the nuances of defect assisted transport through the a-Si:H(i) buffer layer.",
keywords = "amorphous silicon, heterojunction, modeling, multiscale, silicon, simulation, solar cells",
author = "Pradyumna Muralidharan and Stephen Goodnick and Dragica Vasileska",
note = "Funding Information: ACKNOWLEDGMENT This material is based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC 1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 ; Conference date: 24-09-2018 Through 26-09-2018",
year = "2018",
month = nov,
day = "28",
doi = "10.1109/SISPAD.2018.8551745",
language = "English (US)",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "14--17",
booktitle = "SISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings",
}