Quantum wires have been fabricated in strained silicon heterostructures grown on 2° tilted substrates. Magnetoresistance of both wires and Hall bars have been examined at 0.3 K for slow Shubnikov-de Haas (SdH) oscillations that would indicate the formation of minigaps in the band structure of off-axis electron transport. Structures were oriented both parallel and perpendicular to the step edges. The Hall bar structures exhibit no evidence of mini-band formation at 0.3 K, and little anisotropy other than slightly reduced carrier density and mobility in the perpendicular Hall bar. The quantum wires are decidedly more modulated by low-frequency oscillations, and exhibit anisotropic behavior.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering