Quantum wires in strained silicon quantum wells on tilted substrates

M. J. Rack, Trevor Thornton, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Quantum wires have been fabricated in strained silicon heterostructures grown on 2° tilted substrates. Magnetoresistance of both wires and Hall bars have been examined at 0.3 K for slow Shubnikov-de Haas (SdH) oscillations that would indicate the formation of minigaps in the band structure of off-axis electron transport. Structures were oriented both parallel and perpendicular to the step edges. The Hall bar structures exhibit no evidence of mini-band formation at 0.3 K, and little anisotropy other than slightly reduced carrier density and mobility in the perpendicular Hall bar. The quantum wires are decidedly more modulated by low-frequency oscillations, and exhibit anisotropic behavior.

Original languageEnglish (US)
Pages (from-to)369-376
Number of pages8
JournalSuperlattices and Microstructures
Issue number5-6
StatePublished - Nov 2000

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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