Quantum interference in the n-channel of a Si:SiGe quantum well

Keyphrases

• N-channel 100%
• Quantum Interference 100%
• Si MOSFET 100%
• SiGe Quantum Well 100%
• Temperature Effect 50%
• Temperature Range 50%
• Low Temperature 50%
• Quantum Well 50%
• 2-dimensional Electron Gas (2DEG) 50%
• Low Field 50%
• Negative Magnetoresistance 50%
• Strained Si 50%
• Electron-phonon Scattering 50%
• Gas Source Molecular Beam Epitaxy 50%
• Weak Localization 50%
• Intervalley Scattering 50%
• Power Law Dependence 50%
• Phase Coherence Length 50%
• Dephasing Mechanism 50%

Physics

• Quantum Wells 100%
• Field Effect Transistor 66%
• Temperature Dependence 33%
• Magnetoresistance 33%
• Electron Gas 33%
• Phase Coherence 33%
• Molecular Beam Epitaxy 33%
• Phonon 33%

Material Science

• Quantum Well 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 66%
• Molecular Beam Epitaxy 33%
• Magnetoresistance 33%
• Dephasing 33%