Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller; Y. Dora; F. Wu; X. Chen; S. Chowdury; S. P. Denbaars; J. S. Speck; U. K. Mishra

doi:10.1063/1.3499428

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

S. Keller
, Y. Dora
, F. Wu
, X. Chen
, S. Chowdury
, S. P. Denbaars
, J. S. Speck
, U. K. Mishra

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 10¹² cm^-2 an electron mobility of 1500 cm²/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

Original language	English (US)
Article number	142109
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3499428
State	Published - Oct 4 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3499428

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title = "Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition",

abstract = "Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.",

author = "S. Keller and Y. Dora and F. Wu and X. Chen and S. Chowdury and Denbaars, \{S. P.\} and Speck, \{J. S.\} and Mishra, \{U. K.\}",

note = "Funding Information: The authors gratefully acknowledge the support of AFOSR (Dr. K. Reinhardt and Dr. J. Witt) and the ONR-MINE program (Dr. Paul Maki and Dr. Harry Dietrich).",

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doi = "10.1063/1.3499428",

language = "English (US)",

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T1 - Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

AU - Keller, S.

AU - Dora, Y.

AU - Wu, F.

AU - Chen, X.

AU - Chowdury, S.

AU - Denbaars, S. P.

AU - Speck, J. S.

AU - Mishra, U. K.

N1 - Funding Information: The authors gratefully acknowledge the support of AFOSR (Dr. K. Reinhardt and Dr. J. Witt) and the ONR-MINE program (Dr. Paul Maki and Dr. Harry Dietrich).

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

AB - Smooth N-polar GaN films and GaN/AlGaN/GaN heterostructures with properties comparable to Ga-polar GaN-on-silicon films were grown by metal organic chemical vapor deposition on (111) silicon substrates with a misorientation angle of 3.5° toward the [11 2-] direction. For heterostructures with a sheet electron density of 9× 1012 cm-2 an electron mobility of 1500 cm2/V s was derived for transport parallel to the surface steps which formed as a result of the substrate misorientation.

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IS - 14

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ER -

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

Abstract

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