Abstract
The technique of profile imaging in the high-resolution electron microscope can be used to provide information about surfaces and surface reactions. Applications of the method to metals, oxides, semiconductors and small particles, as well as electron-beam-induced surface reactions, are reviewed. The role of image simulations and the need for ultra-high-vacuum and specimen-treatment facilities are also discussed.
Original language | English (US) |
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Pages (from-to) | 123-134 |
Number of pages | 12 |
Journal | Ultramicroscopy |
Volume | 29 |
Issue number | 1-4 |
DOIs | |
State | Published - May 2 1989 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Instrumentation