Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

Maxwell Cotton; Stanislau Herasimenka; William J. Dauksher; Emmett Howard; Mark Strnad; Stuart Bowden

doi:10.1109/PVSC.2016.7749678

Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

Maxwell Cotton, Stanislau Herasimenka, William J. Dauksher, Emmett Howard, Mark Strnad, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	643-644
Number of pages	2
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749678
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

Bonding
Heterojunction
Thin Silicon

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7749678

Cite this

Cotton, M., Herasimenka, S., Dauksher, W. J., Howard, E., Strnad, M., & Bowden, S. (2016). Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 643-644). Article 7749678 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749678

Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. / Cotton, Maxwell; Herasimenka, Stanislau; Dauksher, William J. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 643-644 7749678.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cotton, M, Herasimenka, S, Dauksher, WJ, Howard, E, Strnad, M & Bowden, S 2016, Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7749678, Institute of Electrical and Electronics Engineers Inc., pp. 643-644, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749678

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abstract = "A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.",

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AU - Bowden, Stuart

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AB - A method of processing ultrathin silicon solar cells by bonding them to a glass carrier is described. The method allows processing large area solar cells on the wafers with down to 10 micron thickness. In the method the rear side of a solar cell is processed on a stand-alone wafer. The cell is then bonded to a glass carrier followed by chemical thinning and processing of the front side. Finally, the cell is de-bonded from the glass carrier. This work applied bonding process previously developed at Arizona State University Flexible Electronics and Display Center to a SHJ solar cell. It was found that bonding material can withstand wafer thinning and acidic cleans used in SHJ processing. We also show that bonding material doesn't contaminate PECVD or sputtering chambers and doesn't prevent achieving very good surface passivation.

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Processing of ultrathin silicon heterojunction solar cells bonded to a glass carrier

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Keywords

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