TY - JOUR
T1 - Probing Defects in MoS2 Van der Waals Crystal through Deep-Level Transient Spectroscopy
AU - Gelczuk, Łukasz
AU - Kopaczek, Jan
AU - Scharoch, Paweł
AU - Komorowska, Katarzyna
AU - Blei, Mark
AU - Tongay, Sefaattin
AU - Kudrawiec, Robert
N1 - Funding Information:
This work was supported by the National Science Centre (NCN), Poland OPUS 13 Grant No. 2017/25/B/ST7/01203 and Wrocław University of Science and Technology statutory grant. S.T. acknowledges support from NSF DMR‐1552220 and NSF DMR‐1955889 and NSF‐CMMI 1933214.
Funding Information:
This work was supported by the National Science Centre (NCN), Poland OPUS 13 Grant No. 2017/25/B/ST7/01203 and Wroc?aw University of Science and Technology statutory grant. S.T. acknowledges support from NSF DMR-1552220 and NSF DMR-1955889 and NSF-CMMI 1933214.
Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2020/12
Y1 - 2020/12
N2 - The electrical performance of transition metal dichalcogenides (TMDCs) is strongly affected by the quality of electrical metal contacts and the formation of electrically active defects. Herein, deep-level transient spectroscopy (DLTS) is used for direct probing of deep-level defects in the bandgap of single MoS2 van der Waals crystal. Standard DLTS temperature spectra reveal a deep-level trap located at about 0.36 eV below the conduction band edge. This trap is tentatively attributed to sulfur vacancies and localized on the electronic band structure of MoS2, obtained within the density functional theory (DFT), and matched with experimentally studied electronic band structure, by absorption and contactless electroreflectance (CER) spectroscopy.
AB - The electrical performance of transition metal dichalcogenides (TMDCs) is strongly affected by the quality of electrical metal contacts and the formation of electrically active defects. Herein, deep-level transient spectroscopy (DLTS) is used for direct probing of deep-level defects in the bandgap of single MoS2 van der Waals crystal. Standard DLTS temperature spectra reveal a deep-level trap located at about 0.36 eV below the conduction band edge. This trap is tentatively attributed to sulfur vacancies and localized on the electronic band structure of MoS2, obtained within the density functional theory (DFT), and matched with experimentally studied electronic band structure, by absorption and contactless electroreflectance (CER) spectroscopy.
KW - MoS
KW - deep-level transient spectroscopy
KW - native defects
KW - van der Waals crystals
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U2 - 10.1002/pssr.202000381
DO - 10.1002/pssr.202000381
M3 - Article
AN - SCOPUS:85091270544
SN - 1862-6254
VL - 14
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 12
M1 - 2000381
ER -