Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights

N. Newman; P. Phatak; C. S. Gworek; E. R. Weber; B. T. Jonker

doi:10.1103/PhysRevB.64.045322

Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights

N. Newman, P. Phatak, C. S. Gworek, E. R. Weber, B. T. Jonker

Engineering of Matter, Transport and Energy, School for (IAFSE-SEMTE)

Research output: Contribution to journal › Article › peer-review

Abstract

The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

Original language	English (US)
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.64.045322
State	Published - 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.64.045322

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@article{0acf467bf5ca40adadf4e9e28a911766,

title = "Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights",

abstract = "The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.",

author = "N. Newman and P. Phatak and Gworek, {C. S.} and Weber, {E. R.} and Jonker, {B. T.}",

year = "2001",

doi = "10.1103/PhysRevB.64.045322",

language = "English (US)",

volume = "64",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights

AU - Newman, N.

AU - Phatak, P.

AU - Gworek, C. S.

AU - Weber, E. R.

AU - Jonker, B. T.

PY - 2001

Y1 - 2001

N2 - The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

AB - The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.

UR - http://www.scopus.com/inward/record.url?scp=85038916662&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038916662&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.64.045322

DO - 10.1103/PhysRevB.64.045322

M3 - Article

AN - SCOPUS:85038916662

SN - 1098-0121

VL - 64

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

ER -

Pressure dependence of Cu, Ag, and (formula presented) Schottky barrier heights

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