The Schottky barrier height of intimate Cu/GaAs (110), Ag/GaAs (110), and Fe/GaAs (100) has been measured as a function of hydrostatic pressure. The pressure dependence of the Cu and (formula presented) barrier heights of (formula presented) fall within the uncertainty of the pressure dependence of the (formula presented) defect and track the predicted value of (formula presented)-rich interfaces. In contrast, the pressure dependence of the (formula presented) Schottky barrier height of (formula presented) does not fall within experimental error of these values and falls at nearly the predicted dependence of defect-free interfaces.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 2001|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics