Preferential Co-Si bonding at the Co/SiGe(100) interface

B. I. Boyanov, P. T. Goeller, D. E. Sayers, R. J. Newmanich

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The initial stages of the reaction of Co with Si0.79Ge0.21(100) were studied in situ with extended x-ray absorption fine structure spectroscopy and reflection high energy electron diffraction. The Si:Ge ratio in the first coordination shell of Co in sub-monolayer Co films was found to increase with film thickness and annealing temperature, indicating preferential formation of Co-Si bonds. The impact of the observed preference for Co-Si bonding on the morphology of epitaxial CoSi2/S1-xGex heterostructures is discussed.

Original languageEnglish (US)
Pages (from-to)3060-3062
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - Nov 24 1997
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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