@article{4236d701f79e4172aea2ea53840cfe2d,
title = "Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides",
abstract = "Bipolar test structures were irradiated and annealed with various combinations of molecular hydrogen gas ambients, bias, and thermal conditions. The results show that the buildup and annealing behavior of defects in bipolar base oxides depend strongly on hydrogen concentration. Differences observed in trapped oxide charge annealing rates suggest that the charged defects created in hydrogen-rich environments may be attributed to different types of positive charge in addition to trapped holes.",
keywords = "Bipolar oxide, Gated bipolar devices, Hydrogen, Interface traps, Oxide trapped charge, Radiation-induced",
author = "Chen, {X. Jie} and Hugh Barnaby and Bert Vermeire and Keith Holbert and David Wright and Pease, {Ronald L.} and Schrimpf, {Ronald D.} and Fleetwood, {Daniel M.} and Pantelides, {Sokrates T.} and Shaneyfelt, {Marty R.} and Philippe Adell",
note = "Funding Information: Manuscript received July 11, 2008; revised September 09, 2008. Current version published December 31, 2008. This work is supported by NASA{\textquoteright}s Jet Propulsion Laboratory with funding from the NASA Electronics Parts Program (NEPP), and the Air Force Office of Scientific Research with funding from the MURI program. This work is also supported by the United States Department of Energy. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract DE-AC04-94AL85000.",
year = "2008",
month = dec,
doi = "10.1109/TNS.2008.2006972",
language = "English (US)",
volume = "55",
pages = "3032--3038",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}