Polarity determination by atomic location by channeling-enhanced microanalysis

N. Jiang, T. J. Eustis, J. Cai, Fernando Ponce, John Spence, J. Silcox

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


In this letter, an alternative approach to determine the polarity of GaN thin films based on the atomic location by channeling-enhanced microanalysis technique is described. Theoretical calculations provide a straightforward criterion for polarity determination that is a major advantage of this method. At the Bragg position, the thickness-averaged incident electron intensity, and hence, electron induced characteristic x-ray yield, is higher on the N plane than on the Ga if the g vector of the diffraction beam is parallel to the Ga-N bond direction, and vice versa. Experimental results support the theoretical predictions. The possible errors in the experiments are also discussed.

Original languageEnglish (US)
Pages (from-to)389-391
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - Jan 21 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Polarity determination by atomic location by channeling-enhanced microanalysis'. Together they form a unique fingerprint.

Cite this