Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3

Sushovan Dhara; Ashok Dheenan; Nidhin Kurian Kalarickal; Hsien Lien Huang; Ahmad Ehteshamul Islam; Chandan Joishi; Andreas Fiedler; Joe F. McGlone; Steven A. Ringel; Jinwoo Hwang; Siddharth Rajan

doi:10.1063/5.0146567

Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β-Ga₂O₃

Sushovan Dhara, Ashok Dheenan, Nidhin Kurian Kalarickal, Hsien Lien Huang, Ahmad Ehteshamul Islam, Chandan Joishi, Andreas Fiedler, Joe F. McGlone, Steven A. Ringel, Jinwoo Hwang, Siddharth Rajan

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4 Scopus citations

Abstract

In this work, we have investigated plasma-assisted deposition of Al₂O₃ on HVPE (001) β-Ga₂O₃ and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga₂O₃, with relatively low hysteresis in capacitance-voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al₂O₃/β-Ga₂O₃ MOS structures for device application purposes.

Original language	English (US)
Article number	083504
Journal	Applied Physics Letters
Volume	123
Issue number	8
DOIs	https://doi.org/10.1063/5.0146567
State	Published - Aug 21 2023
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/5.0146567

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title = "Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β-Ga2O3",

abstract = "In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga2O3, with relatively low hysteresis in capacitance-voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al2O3/β-Ga2O3 MOS structures for device application purposes.",

author = "Sushovan Dhara and Ashok Dheenan and Kalarickal, {Nidhin Kurian} and Huang, {Hsien Lien} and Islam, {Ahmad Ehteshamul} and Chandan Joishi and Andreas Fiedler and McGlone, {Joe F.} and Ringel, {Steven A.} and Jinwoo Hwang and Siddharth Rajan",

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doi = "10.1063/5.0146567",

language = "English (US)",

volume = "123",

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AU - Dhara, Sushovan

AU - Dheenan, Ashok

AU - Kalarickal, Nidhin Kurian

AU - Huang, Hsien Lien

AU - Islam, Ahmad Ehteshamul

AU - Joishi, Chandan

AU - Fiedler, Andreas

AU - McGlone, Joe F.

AU - Ringel, Steven A.

AU - Hwang, Jinwoo

AU - Rajan, Siddharth

PY - 2023/8/21

Y1 - 2023/8/21

N2 - In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga2O3, with relatively low hysteresis in capacitance-voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al2O3/β-Ga2O3 MOS structures for device application purposes.

AB - In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga2O3, with relatively low hysteresis in capacitance-voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al2O3/β-Ga2O3 MOS structures for device application purposes.

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Plasma-assisted deposition and characterization of Al₂O₃ dielectric layers on (001) β-Ga₂O₃

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