Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure

Y. Chen; Kong-Thon Tsen; O. F. Sankey; D. K. Ferry

doi:10.1016/S0921-4526(01)01415-6

Picosecond Raman studies of field-induced transient hole transport in an Al_0.3Ga_0.7As-based p-i-n nanostructure

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

Electric field-induced transient hole transport in an Al_0.3Ga_0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of n_h ≅ 5 × 10¹⁷ cm^-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 10⁶ cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 10⁶ cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.

Original language	English (US)
Pages (from-to)	278-282
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01415-6
State	Published - Mar 2002

Keywords

AlGaAs
Hole transport
Raman spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(01)01415-6

Cite this

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title = "Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure",

abstract = "Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 106 cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 106 cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.",

keywords = "AlGaAs, Hole transport, Raman spectroscopy",

author = "Y. Chen and Kong-Thon Tsen and Sankey, {O. F.} and Ferry, {D. K.}",

year = "2002",

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TY - JOUR

T1 - Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure

AU - Chen, Y.

AU - Tsen, Kong-Thon

AU - Sankey, O. F.

AU - Ferry, D. K.

PY - 2002/3

Y1 - 2002/3

N2 - Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 106 cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 106 cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.

AB - Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 106 cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 106 cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.

KW - AlGaAs

KW - Hole transport

KW - Raman spectroscopy

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