Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

W. Liang; Kong-Thon Tsen; C. Poweleit; J. M. Barker; D. K. Ferry; H. Morkoc

doi:10.1063/1.1994571

Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, C. Poweleit, J. M. Barker, D. K. Ferry, H. Morkoc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs-based p-i-n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	1263-1264
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994571
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1994571

Cite this

Liang, W., Tsen, K-T., Poweleit, C., Barker, J. M., Ferry, D. K., & Morkoc, H. (2005). Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1263-1264). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994571

Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure. / Liang, W.; Tsen, Kong-Thon; Poweleit, C. et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1263-1264 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liang, W, Tsen, K-T, Poweleit, C, Barker, JM, Ferry, DK & Morkoc, H 2005, Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 1263-1264, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994571

@inproceedings{6a95388b42d04073910706e15236e182,

title = "Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure",

abstract = "Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs-based p-i-n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.",

author = "W. Liang and Kong-Thon Tsen and C. Poweleit and Barker, {J. M.} and Ferry, {D. K.} and H. Morkoc",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994571",

language = "English (US)",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "1263--1264",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

TY - GEN

T1 - Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Poweleit, C.

AU - Barker, J. M.

AU - Ferry, D. K.

AU - Morkoc, H.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs-based p-i-n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.

AB - Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs-based p-i-n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.

UR - http://www.scopus.com/inward/record.url?scp=33749476291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749476291&partnerID=8YFLogxK

U2 - 10.1063/1.1994571

DO - 10.1063/1.1994571

M3 - Conference contribution

AN - SCOPUS:33749476291

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 1263

EP - 1264

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

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