Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

G. Grzybowski, L. Jiang, J. Mathews, R. Roucka, C. Xu, R. T. Beeler, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticlepeer-review

32 Scopus citations


Photoluminescence has been observed at room temperature in phosphorus-dopedGe1-ySny/Si(100) alloys containing carrier densities in the 1-6 1019 cm-3 range. The emission intensity is one order of magnitude stronger than observed in similar undoped films, and the enhancement is consistent with theoretical predictions for doped-Ge like materials. The ratio Idir/Iind of direct over indirect gap emission is found to increase for high-Sn concentrations as a result of the reduced -L valley separation in Ge1-ySny alloys. These results confirm that alloying with Sn is a viable alternative to tensile strain as a tool to enhance direct-gap emission in Ge-like semiconductors.

Original languageEnglish (US)
Article number171910
JournalApplied Physics Letters
Issue number17
StatePublished - Oct 24 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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