Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

G. Grzybowski; L. Jiang; J. Mathews; R. Roucka; C. Xu; R. T. Beeler; John Kouvetakis; Jose Menendez

doi:10.1063/1.3655679

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

G. Grzybowski, L. Jiang, J. Mathews, R. Roucka, C. Xu, R. T. Beeler, John Kouvetakis, Jose Menendez

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Abstract

Photoluminescence has been observed at room temperature in phosphorus-dopedGe_1-ySn_y/Si(100) alloys containing carrier densities in the 1-6 10¹⁹ cm^-3 range. The emission intensity is one order of magnitude stronger than observed in similar undoped films, and the enhancement is consistent with theoretical predictions for doped-Ge like materials. The ratio I_dir/I_ind of direct over indirect gap emission is found to increase for high-Sn concentrations as a result of the reduced -L valley separation in Ge_1-ySn_y alloys. These results confirm that alloying with Sn is a viable alternative to tensile strain as a tool to enhance direct-gap emission in Ge-like semiconductors.

Original language	English (US)
Article number	171910
Journal	Applied Physics Letters
Volume	99
Issue number	17
DOIs	https://doi.org/10.1063/1.3655679
State	Published - Oct 24 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3655679

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title = "Photoluminescence from heavily doped GeSn:P materials grown on Si(100)",

abstract = "Photoluminescence has been observed at room temperature in phosphorus-dopedGe1-ySny/Si(100) alloys containing carrier densities in the 1-6 1019 cm-3 range. The emission intensity is one order of magnitude stronger than observed in similar undoped films, and the enhancement is consistent with theoretical predictions for doped-Ge like materials. The ratio Idir/Iind of direct over indirect gap emission is found to increase for high-Sn concentrations as a result of the reduced -L valley separation in Ge1-ySny alloys. These results confirm that alloying with Sn is a viable alternative to tensile strain as a tool to enhance direct-gap emission in Ge-like semiconductors.",

author = "G. Grzybowski and L. Jiang and J. Mathews and R. Roucka and C. Xu and Beeler, {R. T.} and John Kouvetakis and Jose Menendez",

note = "Funding Information: This work was supported by the U.S. Air Force under contract DOD AFOSR FA9550-06-01-0442 (MURI program) and by the National Science Foundation under Grant No. DMR-0907600.",

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AU - Grzybowski, G.

AU - Jiang, L.

AU - Mathews, J.

AU - Roucka, R.

AU - Xu, C.

AU - Beeler, R. T.

AU - Kouvetakis, John

AU - Menendez, Jose

N1 - Funding Information: This work was supported by the U.S. Air Force under contract DOD AFOSR FA9550-06-01-0442 (MURI program) and by the National Science Foundation under Grant No. DMR-0907600.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - Photoluminescence has been observed at room temperature in phosphorus-dopedGe1-ySny/Si(100) alloys containing carrier densities in the 1-6 1019 cm-3 range. The emission intensity is one order of magnitude stronger than observed in similar undoped films, and the enhancement is consistent with theoretical predictions for doped-Ge like materials. The ratio Idir/Iind of direct over indirect gap emission is found to increase for high-Sn concentrations as a result of the reduced -L valley separation in Ge1-ySny alloys. These results confirm that alloying with Sn is a viable alternative to tensile strain as a tool to enhance direct-gap emission in Ge-like semiconductors.

AB - Photoluminescence has been observed at room temperature in phosphorus-dopedGe1-ySny/Si(100) alloys containing carrier densities in the 1-6 1019 cm-3 range. The emission intensity is one order of magnitude stronger than observed in similar undoped films, and the enhancement is consistent with theoretical predictions for doped-Ge like materials. The ratio Idir/Iind of direct over indirect gap emission is found to increase for high-Sn concentrations as a result of the reduced -L valley separation in Ge1-ySny alloys. These results confirm that alloying with Sn is a viable alternative to tensile strain as a tool to enhance direct-gap emission in Ge-like semiconductors.

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Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

Abstract

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