Phase breaking of trapped electrons in a gated quantum dot

N. Sasaki, Y. Ohkubo, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry

Research output: Contribution to journalArticlepeer-review


We have observed conductance fluctuations due to electron interference in a split-gate quantum dot, fabricated in the two-dimensional electron gas of a GaAs/AlxGa1-xAs heterojunction. We have determined the phase breaking time of electrons by two independent analyses, using the correlation field and the amplitude of the fluctuations. Phase breaking times obtained by these distinct approaches are found to differ from each other by a factor of six.

Original languageEnglish (US)
JournalSuperlattices and Microstructures
Issue number1
StatePublished - Jul 1997


  • Conductance fluctuations
  • GaAs/AlGaAs
  • Phase breaking time

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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