Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing

Dong Sheng Chen, Jie Yang, Fei Xu, Ping Hua Zhou, Hui Wei Du, Jian Wei Shi, Zheng Shan Yu, Yu Hong Zhang, Brian Bartholomeusz, Zhong Quan Ma

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In this paper, we investigated the effect of rapid thermal annealing (RTA) on solar cell performance. An opto-electric conversion efficiency of 11.75% (Voc = 0.64 V, Jsc = 25.88 mA/cm2, FF=72.08%) was obtained under AM 1.5G when the cell was annealed at 300 °C for 30 s. The annealed solar cell showed an average absolute efficiency 1.5% higher than that of the as-deposited one. For the microstructure analysis and the physical phase confirmation, X-ray diffraction (XRD), Raman spectra, front surface reflection (FSR), internal quantum efficiency (IQE), and X-ray photoelectron spectroscopy (XPS) were respectively applied to distinguish the causes inducing the efficiency variation. All experimental results implied that the RTA eliminated recombination centers at the p-n junction, reduced the surface optical losses, enhanced the blue response of the CdS buffer layer, and improved the ohmic contact between Mo and Cu(In, Ga)Se2 (CIGS) layers. This leaded to the improved performance of CIGS solar cell.

Original languageEnglish (US)
Article number018801
JournalChinese Physics B
Issue number1
StatePublished - Jan 2013
Externally publishedYes


  • CdS/Cu(In,Ga)Se
  • performance improvement
  • rapid thermal annealing
  • solar cell

ASJC Scopus subject areas

  • General Physics and Astronomy


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