Passivation of Ag on SiO2by annealing Ag-Ti alloys in an ammonia ambient

Daniel Adams, Terry Alford, T. Laursen, J. W. Mayer, L. Zou

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in a flowing NH3ambient at temperatures between 400-700°C for various times. Upon annealing at temperatures ¿ 350°C Ti segregates to the surface and alloy/SiO2interface. At the free surface Ti reacts with the ammonia to form a TiN(O) surface layer. The Ti that diffuses to the interface dissociates the SiO2and subsequently reacts with the freed Si and O to form a TiO/Ti5Si3interfacial bilayer structure. RBS data indicated that the dealloying and hence the encapsulation increases with increasing temperature up to 600°C, whereafter it levels off. Residual Ti concentrations of ∼1 at.% was measured at temperatures ¿ 600°C. Resistivity values of ∼3 ¿¿-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.

Original languageEnglish (US)
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society
Number of pages8
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
StatePublished - Jan 1 1996
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: Sep 9 1996Sep 11 1996

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876


Other26th European Solid State Device Research Conference, ESSDERC 1996

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality


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