@inproceedings{d8b359c555404bcf84e562e49861f550,
title = "Passivation of Ag on SiO2by annealing Ag-Ti alloys in an ammonia ambient",
abstract = "Encapsulated Ag(Ti) films on oxidized silicon were obtained by nitridation of Ag(19 at.% Ti) alloys in a flowing NH3ambient at temperatures between 400-700°C for various times. Upon annealing at temperatures ¿ 350°C Ti segregates to the surface and alloy/SiO2interface. At the free surface Ti reacts with the ammonia to form a TiN(O) surface layer. The Ti that diffuses to the interface dissociates the SiO2and subsequently reacts with the freed Si and O to form a TiO/Ti5Si3interfacial bilayer structure. RBS data indicated that the dealloying and hence the encapsulation increases with increasing temperature up to 600°C, whereafter it levels off. Residual Ti concentrations of ∼1 at.% was measured at temperatures ¿ 600°C. Resistivity values of ∼3 ¿¿-cm were measured in the encapsulated Ag alloys. The results suggest that resistivity is controlled by the residual Ti concentration.",
author = "Daniel Adams and Terry Alford and T. Laursen and Mayer, {J. W.} and L. Zou",
year = "1996",
month = jan,
day = "1",
language = "English (US)",
isbn = "9782863321966",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "31--38",
editor = "Massimo Rudan and Giorgio Baccarani",
booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",
note = "26th European Solid State Device Research Conference, ESSDERC 1996 ; Conference date: 09-09-1996 Through 11-09-1996",
}