Passivated emitters in silicon solar cells

Richard King; Peter E. Gruenbaum; Ronald A. Sinton; Richard M. Swanson

Passivated emitters in silicon solar cells

Richard King, Peter E. Gruenbaum, Ronald A. Sinton, Richard M. Swanson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, J_o, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of J_o which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm²) and one-sun efficiencies up to 22.7%.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Publ by IEEE
Pages	227-232
Number of pages	6
Volume	1
State	Published - May 1990
Externally published	Yes
Event	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: May 21 1990 → May 25 1990

Other

Other	Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)
City	Kissimimee, FL, USA
Period	5/21/90 → 5/25/90

ASJC Scopus subject areas

Control and Systems Engineering
Condensed Matter Physics

Cite this

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title = "Passivated emitters in silicon solar cells",

abstract = "In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, Jo, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of Jo which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm2) and one-sun efficiencies up to 22.7%.",

author = "Richard King and Gruenbaum, {Peter E.} and Sinton, {Ronald A.} and Swanson, {Richard M.}",

year = "1990",

month = may,

language = "English (US)",

volume = "1",

pages = "227--232",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Publ by IEEE",

note = "Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) ; Conference date: 21-05-1990 Through 25-05-1990",

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TY - GEN

T1 - Passivated emitters in silicon solar cells

AU - King, Richard

AU - Gruenbaum, Peter E.

AU - Sinton, Ronald A.

AU - Swanson, Richard M.

PY - 1990/5

Y1 - 1990/5

N2 - In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, Jo, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of Jo which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm2) and one-sun efficiencies up to 22.7%.

AB - In high-efficiency silicon solar cells with low metal contact coverage fractions and high bulk lifetimes, cell performance is often dominated by recombination in the oxide-passivated diffusions on the cell surface. Measurements of the emitter saturation current density, Jo, of oxide-passivated, boron and phosphorus diffusions are presented, and from these measurements, the dependence of surface recombination velocity on dopant concentration is extracted. The lowest observed values of Jo which are stable under UV light are given for both boron- and phosphorus-doped, oxide-passivated diffusions, for both textured and untextured surfaces. Contour plots which incorporate the above data were applied to two types of backside-contact solar cells with large area (37.5 cm2) and one-sun efficiencies up to 22.7%.

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M3 - Conference contribution

AN - SCOPUS:0025420784

VL - 1

SP - 227

EP - 232

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

PB - Publ by IEEE

T2 - Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2)

Y2 - 21 May 1990 through 25 May 1990

ER -

Passivated emitters in silicon solar cells

Abstract

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ASJC Scopus subject areas

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