Oxide-based RRAM: Uniformity improvement using a new material-oriented methodology

B. Gao, H. W. Zhang, S. Yu, B. Sun, L. F. Liu, X. Y. Liu, Y. Wang, R. Q. Han, J. F. Kang, B. Yu, Y. Y. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

117 Scopus citations


For the first time, a new technical solution is presented to essentially improve the uniformity of oxide based RRAM devices by using material design methodology based on first principle calculations. The results indicate that doping of trivalent elements such as Al, La, or Ga into the tetravalent metal oxides such as HfO2 or ZrO2 effectively controls the formation of oxygen vacancy filaments along the doping sites, which helps improving the resistive switching (RS) behaviors in oxide based RRAM devices. The improved uniformity of forming and set/reset behaviors in the Al-doped HfO2 RRAM devices was demonstrated by both experiments and theoretical calculations, proving the validity of the proposed method.

Original languageEnglish (US)
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Number of pages2
StatePublished - 2009
Externally publishedYes
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: Jun 16 2009Jun 18 2009

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562


Other2009 Symposium on VLSI Technology, VLSIT 2009


  • RRAM
  • Resistive switching
  • Uniformity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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