Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers

B. J. Skromme, K. Palle, C. D. Poweleit, L. R. Bryant, W. M. Vetter, M. Dudley, K. Moore, T. Gehoski

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A dramatic crystalline instability is observed for very heavily N-doped 4H-SiC wafers when subjected to thermal oxidation. Initially smooth wafer surfaces become dimpled and distorted in the darker central regions corresponding to original (000-1) facets on the boules. X-ray topography reveals a dense cellular network of dislocations in the deformed regions. Schottky barriers of Pt, Ni, and Ti show barrier heights that are uniformly reduced by about 0.47 V in the dimpled regions compared to the undisturbed peripheries, independent of metal work function. Photoluminescence energies are reduced by about 0.74 eV and intensities of certain Raman peaks are modified. Based on these data, the existence of thin, predominantly cubic lamellae is suspected.

Original languageEnglish (US)
Pages (from-to)455-458
Number of pages4
JournalMaterials Science Forum
Issue number1
StatePublished - 2002


  • Crystallographic transformation
  • Dimpling
  • Dislocations
  • Extended defects
  • Heavy doping
  • Oxidation
  • Photoluminescence
  • Raman scattering
  • Schottky barrier
  • X-ray topography

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Oxidation-induced crystallographic transformation in heavily N-doped 4H-SiC wafers'. Together they form a unique fingerprint.

Cite this