Origins of total-dose response variability in linear bipolar microcircuits

H. J. Barnaby; C. R. Cirba; R. D. Schrimpf; D. M. Fleetwood; R. L. Pease; M. R. Shaneyfelt; T. Turflinger; J. F. Krieg; M. C. Maher

doi:10.1109/23.903775

Origins of total-dose response variability in linear bipolar microcircuits

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J. F. Krieg, M. C. Maher

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

LM111 voltage comparators exhibit a wide range of total-dose-induced degradation. Simulations show this variability may be a natural consequence of the low base doping of the substrate PNP (SPNP) input transistors. Low base doping increases the SPNPs collector to base breakdown voltage, current gain, and densities. The build-up of oxide trapped charge (N _OT) and interface traps (N _IT) is shown to be a function of pre-irradiation bakes. Experimental data indicate that, despite its structural similarities to the LM111, irradiated input transistors of the LM124 operational amplifier do not exhibit the same sensitivity to variations in pre-irradiation thermal cycles. Further disparities in LM111 and LM124 responses may result from a difference in the oxide defect build-up in the two part types. Variations in processing, packaging, and circuit effects are suggested as potential explanations.

Original language	English (US)
Pages (from-to)	2342-2349
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	47
Issue number	6 III
DOIs	https://doi.org/10.1109/23.903775
State	Published - Dec 2000
Externally published	Yes
Event	2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States Duration: Jul 24 2000 → Jul 28 2000

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Origins of total-dose response variability in linear bipolar microcircuits",

abstract = "LM111 voltage comparators exhibit a wide range of total-dose-induced degradation. Simulations show this variability may be a natural consequence of the low base doping of the substrate PNP (SPNP) input transistors. Low base doping increases the SPNPs collector to base breakdown voltage, current gain, and densities. The build-up of oxide trapped charge (N OT) and interface traps (N IT) is shown to be a function of pre-irradiation bakes. Experimental data indicate that, despite its structural similarities to the LM111, irradiated input transistors of the LM124 operational amplifier do not exhibit the same sensitivity to variations in pre-irradiation thermal cycles. Further disparities in LM111 and LM124 responses may result from a difference in the oxide defect build-up in the two part types. Variations in processing, packaging, and circuit effects are suggested as potential explanations.",

author = "Barnaby, {H. J.} and Cirba, {C. R.} and Schrimpf, {R. D.} and Fleetwood, {D. M.} and Pease, {R. L.} and Shaneyfelt, {M. R.} and T. Turflinger and Krieg, {J. F.} and Maher, {M. C.}",

note = "Funding Information: Manuscript received July 25, 2000. This work was supported by the Defense Threat Reduction Agency and the United States Department of Energy. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lock-heed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000. H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA. R. L. Pease is with RLP Research, Albuquerque, NM 87122 USA. M. R. Shaneyfelt is with Sandia National Laboratories, Albuquerque, NM 87185 USA. T. Turflinger and J. F. Krieg are with NAVSEA Crane, Crane, IN 47522 USA. Publisher Item Identifier S 0018-9499(00)11269-9.; 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) ; Conference date: 24-07-2000 Through 28-07-2000",

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T1 - Origins of total-dose response variability in linear bipolar microcircuits

AU - Barnaby, H. J.

AU - Cirba, C. R.

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Pease, R. L.

AU - Shaneyfelt, M. R.

AU - Turflinger, T.

AU - Krieg, J. F.

AU - Maher, M. C.

N1 - Funding Information: Manuscript received July 25, 2000. This work was supported by the Defense Threat Reduction Agency and the United States Department of Energy. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lock-heed Martin Company, for the United States Department of Energy under Contract DE-AC04-94AL85000. H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA. R. L. Pease is with RLP Research, Albuquerque, NM 87122 USA. M. R. Shaneyfelt is with Sandia National Laboratories, Albuquerque, NM 87185 USA. T. Turflinger and J. F. Krieg are with NAVSEA Crane, Crane, IN 47522 USA. Publisher Item Identifier S 0018-9499(00)11269-9.

PY - 2000/12

Y1 - 2000/12

N2 - LM111 voltage comparators exhibit a wide range of total-dose-induced degradation. Simulations show this variability may be a natural consequence of the low base doping of the substrate PNP (SPNP) input transistors. Low base doping increases the SPNPs collector to base breakdown voltage, current gain, and densities. The build-up of oxide trapped charge (N OT) and interface traps (N IT) is shown to be a function of pre-irradiation bakes. Experimental data indicate that, despite its structural similarities to the LM111, irradiated input transistors of the LM124 operational amplifier do not exhibit the same sensitivity to variations in pre-irradiation thermal cycles. Further disparities in LM111 and LM124 responses may result from a difference in the oxide defect build-up in the two part types. Variations in processing, packaging, and circuit effects are suggested as potential explanations.

AB - LM111 voltage comparators exhibit a wide range of total-dose-induced degradation. Simulations show this variability may be a natural consequence of the low base doping of the substrate PNP (SPNP) input transistors. Low base doping increases the SPNPs collector to base breakdown voltage, current gain, and densities. The build-up of oxide trapped charge (N OT) and interface traps (N IT) is shown to be a function of pre-irradiation bakes. Experimental data indicate that, despite its structural similarities to the LM111, irradiated input transistors of the LM124 operational amplifier do not exhibit the same sensitivity to variations in pre-irradiation thermal cycles. Further disparities in LM111 and LM124 responses may result from a difference in the oxide defect build-up in the two part types. Variations in processing, packaging, and circuit effects are suggested as potential explanations.

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T2 - 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

Y2 - 24 July 2000 through 28 July 2000

ER -

Origins of total-dose response variability in linear bipolar microcircuits

Abstract

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