Abstract
Microwave emission from n-InSb at 770K is investigated, Crystalline orientations of <100>, <110>, and <111> are used to determine dependence of emission on these orientations. Considerable anistropy of emission is observed as B is rotated in the plane perpendicular to E.
Original language | English (US) |
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Pages (from-to) | 1625-1626 |
Number of pages | 2 |
Journal | Proceedings of the IEEE |
Volume | 56 |
Issue number | 9 |
DOIs | |
State | Published - Sep 1968 |
Externally published | Yes |
ASJC Scopus subject areas
- Computer Science(all)
- Electrical and Electronic Engineering