Optical study on the coupled GaAsSb/GaAs double quantum wells

D. S. Jiang; X. G. Liang; K. Chang; L. F. Bian; B. Q. Sun; J. B. Wang; Shane Johnson; Yong-Hang Zhang

doi:10.1109/COMMAD.2002.1237240

Optical study on the coupled GaAsSb/GaAs double quantum wells

D. S. Jiang, X. G. Liang, K. Chang, L. F. Bian, B. Q. Sun, J. B. Wang, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.

Original language	English (US)
Title of host publication	2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings
Editors	Michael Gal
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	255-258
Number of pages	4
ISBN (Electronic)	0780375718
DOIs	https://doi.org/10.1109/COMMAD.2002.1237240
State	Published - 2002
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Sydney, Australia Duration: Dec 11 2002 → Dec 13 2002

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2002-January

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002
Country/Territory	Australia
City	Sydney
Period	12/11/02 → 12/13/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2002.1237240

Cite this

Jiang, D. S., Liang, X. G., Chang, K., Bian, L. F., Sun, B. Q., Wang, J. B., Johnson, S., & Zhang, Y-H. (2002). Optical study on the coupled GaAsSb/GaAs double quantum wells. In M. Gal (Ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings (pp. 255-258). Article 1237240 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2002.1237240

Optical study on the coupled GaAsSb/GaAs double quantum wells. / Jiang, D. S.; Liang, X. G.; Chang, K. et al.
2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. ed. / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. p. 255-258 1237240 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2002-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jiang, DS, Liang, XG, Chang, K, Bian, LF, Sun, BQ, Wang, JB, Johnson, S & Zhang, Y-H 2002, Optical study on the coupled GaAsSb/GaAs double quantum wells. in M Gal (ed.), 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings., 1237240, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2002-January, Institute of Electrical and Electronics Engineers Inc., pp. 255-258, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002, Sydney, Australia, 12/11/02. https://doi.org/10.1109/COMMAD.2002.1237240

Jiang DS, Liang XG, Chang K, Bian LF, Sun BQ, Wang JB et al. Optical study on the coupled GaAsSb/GaAs double quantum wells. In Gal M, editor, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2002. p. 255-258. 1237240. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2002.1237240

Jiang, D. S. ; Liang, X. G. ; Chang, K. et al. / Optical study on the coupled GaAsSb/GaAs double quantum wells. 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. editor / Michael Gal. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 255-258 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

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abstract = "The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.",

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doi = "10.1109/COMMAD.2002.1237240",

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AU - Johnson, Shane

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AB - The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-I QW when the GaAsSb layer thickness is thin enough.

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Optical study on the coupled GaAsSb/GaAs double quantum wells

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