Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

M. Nazari; Y. Zhao; Y. Zhu; V. V. Kuryatkov; A. A. Bemussi; Z. Fan; M. Holtz

doi:10.1557/opl.2012.1582

Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

M. Nazari, Y. Zhao, Y. Zhu, V. V. Kuryatkov, A. A. Bemussi, Z. Fan, M. Holtz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The phase transition of VO₂ grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

Original language	English (US)
Title of host publication	Oxide Semiconductors and Thin Films
Pages	239-244
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1582
State	Published - 2013
Externally published	Yes
Event	2012 MRS Fall Meeting - Boston, MA, United States Duration: Nov 25 2012 → Nov 30 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1494
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/25/12 → 11/30/12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2012.1582

Cite this

Nazari, M., Zhao, Y., Zhu, Y., Kuryatkov, V. V., Bemussi, A. A., Fan, Z., & Holtz, M. (2013). Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. In Oxide Semiconductors and Thin Films (pp. 239-244). (Materials Research Society Symposium Proceedings; Vol. 1494). https://doi.org/10.1557/opl.2012.1582

Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. / Nazari, M.; Zhao, Y.; Zhu, Y. et al.
Oxide Semiconductors and Thin Films. 2013. p. 239-244 (Materials Research Society Symposium Proceedings; Vol. 1494).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nazari, M, Zhao, Y, Zhu, Y, Kuryatkov, VV, Bemussi, AA, Fan, Z & Holtz, M 2013, Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations. in Oxide Semiconductors and Thin Films. Materials Research Society Symposium Proceedings, vol. 1494, pp. 239-244, 2012 MRS Fall Meeting, Boston, MA, United States, 11/25/12. https://doi.org/10.1557/opl.2012.1582

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abstract = "The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.",

author = "M. Nazari and Y. Zhao and Y. Zhu and Kuryatkov, {V. V.} and Bemussi, {A. A.} and Z. Fan and M. Holtz",

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doi = "10.1557/opl.2012.1582",

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AU - Holtz, M.

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AB - The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

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Optical, structural, and electrical properties of vanadium dioxide grown on sapphire substrates with different crystallographic orientations

Abstract

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Conference

ASJC Scopus subject areas

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