Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers

T. L R Brien, P. A R Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H C Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall, Philip Mauskopf

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small (32×14μm) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of 3.0 × 10 - 16 and 6.6×10-17WHz-1/2 for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

Original languageEnglish (US)
Pages (from-to)231-237
Number of pages7
JournalJournal of Low Temperature Physics
Issue number1-2
StatePublished - Jul 1 2016

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Materials Science
  • Condensed Matter Physics


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