Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices

E. H. Steenbergen; Y. Huang; J. H. Ryou; R. D. Dupuis; K. Nunna; D. L. Huffaker; Yong-Hang Zhang

doi:10.1063/1.3671713

Optical properties of strain-balanced InAs/InAs _1-xSb _x type-II superlattices

E. H. Steenbergen, Y. Huang, J. H. Ryou, R. D. Dupuis, K. Nunna, D. L. Huffaker, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

Metalorganic chemical vapor deposition- and molecular beam epitaxy-grown strain-balanced InAs/InAs _1-xSb _x type-II superlattices with 20-100 periods and Sb composition between 0.22≤x≤0.30 exhibit photoluminescence between 5.8 to 10.6 μm at 5 K. The temperature dependent onset of photoresponse obtained from photoconductivity measurements is fit to the Varshni equation, resulting in fitting parameters closer to those of InAs than InSb, and the Fan expression, which gives a Debye temperature less than that of InAs or InSb.

Original language	English (US)
Title of host publication	15th International Conference on Narrow Gap Systems, NGS15
Pages	122-125
Number of pages	4
DOIs	https://doi.org/10.1063/1.3671713
State	Published - Dec 1 2011
Event	15th International Conference on Narrow Gap Systems, NGS15 - Blacksburg, VA, United States Duration: Aug 1 2011 → Aug 5 2011

Publication series

Name	AIP Conference Proceedings
Volume	1416
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	15th International Conference on Narrow Gap Systems, NGS15
Country/Territory	United States
City	Blacksburg, VA
Period	8/1/11 → 8/5/11

Keywords

Infrared
Metalorganic chemical vapor deposition
Molecular beam epitaxy
Photodetector
Superlattice

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3671713

Cite this

Steenbergen, EH, Huang, Y, Ryou, JH, Dupuis, RD, Nunna, K, Huffaker, DL & Zhang, Y-H 2011, Optical properties of strain-balanced InAs/InAs _1-xSb _x type-II superlattices. in 15th International Conference on Narrow Gap Systems, NGS15. AIP Conference Proceedings, vol. 1416, pp. 122-125, 15th International Conference on Narrow Gap Systems, NGS15, Blacksburg, VA, United States, 8/1/11. https://doi.org/10.1063/1.3671713

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abstract = "Metalorganic chemical vapor deposition- and molecular beam epitaxy-grown strain-balanced InAs/InAs 1-xSb x type-II superlattices with 20-100 periods and Sb composition between 0.22≤x≤0.30 exhibit photoluminescence between 5.8 to 10.6 μm at 5 K. The temperature dependent onset of photoresponse obtained from photoconductivity measurements is fit to the Varshni equation, resulting in fitting parameters closer to those of InAs than InSb, and the Fan expression, which gives a Debye temperature less than that of InAs or InSb.",

keywords = "Infrared, Metalorganic chemical vapor deposition, Molecular beam epitaxy, Photodetector, Superlattice",

author = "Steenbergen, {E. H.} and Y. Huang and Ryou, {J. H.} and Dupuis, {R. D.} and K. Nunna and Huffaker, {D. L.} and Yong-Hang Zhang",

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AU - Steenbergen, E. H.

AU - Huang, Y.

AU - Ryou, J. H.

AU - Dupuis, R. D.

AU - Nunna, K.

AU - Huffaker, D. L.

AU - Zhang, Yong-Hang

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N2 - Metalorganic chemical vapor deposition- and molecular beam epitaxy-grown strain-balanced InAs/InAs 1-xSb x type-II superlattices with 20-100 periods and Sb composition between 0.22≤x≤0.30 exhibit photoluminescence between 5.8 to 10.6 μm at 5 K. The temperature dependent onset of photoresponse obtained from photoconductivity measurements is fit to the Varshni equation, resulting in fitting parameters closer to those of InAs than InSb, and the Fan expression, which gives a Debye temperature less than that of InAs or InSb.

AB - Metalorganic chemical vapor deposition- and molecular beam epitaxy-grown strain-balanced InAs/InAs 1-xSb x type-II superlattices with 20-100 periods and Sb composition between 0.22≤x≤0.30 exhibit photoluminescence between 5.8 to 10.6 μm at 5 K. The temperature dependent onset of photoresponse obtained from photoconductivity measurements is fit to the Varshni equation, resulting in fitting parameters closer to those of InAs than InSb, and the Fan expression, which gives a Debye temperature less than that of InAs or InSb.

KW - Infrared

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KW - Photodetector

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