Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD

Candi S. Cook; Stefan Zollner; Matthew R. Bauer; Pavan Aella; John Kouvetakis; Jose Menendez

doi:10.1016/j.tsf.2003.11.277

Optical constants and interband transitions of Ge_1-xSn _x alloys (x<0.2) grown on Si by UHV-CVD

Candi S. Cook, Stefan Zollner, Matthew R. Bauer, Pavan Aella, John Kouvetakis, Jose Menendez

Research output: Contribution to journal › Conference article › peer-review

33 Scopus citations

Abstract

The development of manufacturable direct band gap materials on Si is crucial for optoelectronic devices integrated with silicon circuits. Ge-Sn alloys with varying metastable compositions ranging from 2 to 20% were grown by UHV-CVD using a deuterium-stabilized Sn hydride with digermane. We use deep ultraviolet spectroscopic ellipsometry (0.74 to 6.6 eV) to determine the optical properties of this new class of Si-based infrared semiconductors in the Ge _1-xSn_x system. Optical analysis of the energy-derivatives in comparison with analytical lineshapes shows that the E₁ and E ₂ interband transition energies decrease significantly with increasing Sn content. Tunability of these high-energy gaps shows promise for a direct E₀ band gap in this materials system.

Original language	English (US)
Pages (from-to)	217-221
Number of pages	5
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.277
State	Published - May 1 2004
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: Jul 6 2003 → Jul 11 2003

Keywords

Band structure
GeSn alloy
Interband transitions
Optical constants
Spectroscopic ellipsometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2003.11.277

Cite this

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title = "Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD",

abstract = "The development of manufacturable direct band gap materials on Si is crucial for optoelectronic devices integrated with silicon circuits. Ge-Sn alloys with varying metastable compositions ranging from 2 to 20% were grown by UHV-CVD using a deuterium-stabilized Sn hydride with digermane. We use deep ultraviolet spectroscopic ellipsometry (0.74 to 6.6 eV) to determine the optical properties of this new class of Si-based infrared semiconductors in the Ge 1-xSnx system. Optical analysis of the energy-derivatives in comparison with analytical lineshapes shows that the E1 and E 2 interband transition energies decrease significantly with increasing Sn content. Tunability of these high-energy gaps shows promise for a direct E0 band gap in this materials system.",

keywords = "Band structure, GeSn alloy, Interband transitions, Optical constants, Spectroscopic ellipsometry",

author = "Cook, {Candi S.} and Stefan Zollner and Bauer, {Matthew R.} and Pavan Aella and John Kouvetakis and Jose Menendez",

note = "Funding Information: This work was supported in part by Army Research Office under grant number DAA19-00-1-0471. ; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

year = "2004",

month = may,

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doi = "10.1016/j.tsf.2003.11.277",

language = "English (US)",

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journal = "Thin Solid Films",

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T1 - Optical constants and interband transitions of Ge1-xSn x alloys (x<0.2) grown on Si by UHV-CVD

AU - Cook, Candi S.

AU - Zollner, Stefan

AU - Bauer, Matthew R.

AU - Aella, Pavan

AU - Kouvetakis, John

AU - Menendez, Jose

N1 - Funding Information: This work was supported in part by Army Research Office under grant number DAA19-00-1-0471.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The development of manufacturable direct band gap materials on Si is crucial for optoelectronic devices integrated with silicon circuits. Ge-Sn alloys with varying metastable compositions ranging from 2 to 20% were grown by UHV-CVD using a deuterium-stabilized Sn hydride with digermane. We use deep ultraviolet spectroscopic ellipsometry (0.74 to 6.6 eV) to determine the optical properties of this new class of Si-based infrared semiconductors in the Ge 1-xSnx system. Optical analysis of the energy-derivatives in comparison with analytical lineshapes shows that the E1 and E 2 interband transition energies decrease significantly with increasing Sn content. Tunability of these high-energy gaps shows promise for a direct E0 band gap in this materials system.

AB - The development of manufacturable direct band gap materials on Si is crucial for optoelectronic devices integrated with silicon circuits. Ge-Sn alloys with varying metastable compositions ranging from 2 to 20% were grown by UHV-CVD using a deuterium-stabilized Sn hydride with digermane. We use deep ultraviolet spectroscopic ellipsometry (0.74 to 6.6 eV) to determine the optical properties of this new class of Si-based infrared semiconductors in the Ge 1-xSnx system. Optical analysis of the energy-derivatives in comparison with analytical lineshapes shows that the E1 and E 2 interband transition energies decrease significantly with increasing Sn content. Tunability of these high-energy gaps shows promise for a direct E0 band gap in this materials system.

KW - Band structure

KW - GeSn alloy

KW - Interband transitions

KW - Optical constants

KW - Spectroscopic ellipsometry

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JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

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