Optical characterization of high quality GaN produced by high rate magnetron sputter epitaxy

Minseo Park, E. Carlson, Y. C. Chang, J. F. Muth, J. Bumgarner, R. M. Kolbas, J. J. Cuomo, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The thick films of GaN were investigated using X-ray diffraction, micro-Raman spectroscopy and photoluminescence spectroscopy. The thick films of GaN were prepared on (0001) sapphire using high rate magnetron sputter epitaxy with growth rates as high as 10-60 μm/min. The width of the X-ray rocking curve ((0002) reflection) for the sample produced by this method is ∼300 arc-sec. Only the allowed modes were observed in the polarized Raman spectra. The background electron concentration is lower than 3×10 16 cm -3, which was determined from the Raman spectra. The phonon lifetime determined from Raman E 2 (2) mode was 1.6 ps, which is comparable to that of bulk single crystal GaN grown by sublimation (1.4 ps). The full-width-at-half-maximum of the near band-edge photoluminescence peak obtained at 77K is ∼100 meV.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Number of pages6
StatePublished - 2002
Externally publishedYes
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002


OtherGan and Related Alloys - 2002
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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