@inproceedings{aedd11f37cc546b8bc6693e93e3096a4,
title = "On the variability of HfOx RRAM: From numerical simulation to compact modeling",
abstract = "The trap-assisted conduction and filamentary switching mechanisms of the HfOx-based resistive memory are studied. To reproduce the experimental I-V curves, a numerical simulator is developed. Comparison with experiments shows mat the cycle-to-cycle variation in the RRAM is mainly due to the variation in me gap distance between the filament tips and the electrode. A set of analytical equations suitable for compact modeling is then derived to capture the switching behavior of metal oxide-based RRAM (OxRRAM). By introducing the random perturbations of the gap size, the model successfully reproduces the measured resistance variation of the multi-level RRAM cell.",
keywords = "Compact model, RRAM, Resistive switching, Variation",
author = "Ximeng Guan and Shimeng Yu and Wong, {H. S.Philip}",
year = "2012",
month = aug,
day = "17",
language = "English (US)",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "815--820",
booktitle = "Nanotechnology 2012",
note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",
}