On the use of post-irradiation-gate-stress results to refine sensitive operating area determination

A. Privat; A. D. Touboul; A. Michez; S. Bourdarie; J. R. Vaille; F. Wrobel; N. Chatry; G. Chaumont; E. Lorfevre; F. Bezerra; F. Saigne

doi:10.1109/TNS.2014.2365041

On the use of post-irradiation-gate-stress results to refine sensitive operating area determination

A. Privat, A. D. Touboul, A. Michez, S. Bourdarie, J. R. Vaille, F. Wrobel, N. Chatry, G. Chaumont, E. Lorfevre, F. Bezerra, F. Saigne

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between I_G gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

Original language	English (US)
Article number	6954565
Pages (from-to)	2930-2935
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2014.2365041
State	Published - Dec 1 2014
Externally published	Yes

Keywords

Heavy ion
SEGR
latent Defect
post-irradiation-gate-stress
power MOSFET
reliability

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2014.2365041

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Privat, A., Touboul, A. D., Michez, A., Bourdarie, S., Vaille, J. R., Wrobel, F., Chatry, N., Chaumont, G., Lorfevre, E., Bezerra, F., & Saigne, F. (2014). On the use of post-irradiation-gate-stress results to refine sensitive operating area determination. IEEE Transactions on Nuclear Science, 61(6), 2930-2935. Article 6954565. https://doi.org/10.1109/TNS.2014.2365041

@article{c480a813621442179cad67a2702abd44,

title = "On the use of post-irradiation-gate-stress results to refine sensitive operating area determination",

abstract = "This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.",

keywords = "Heavy ion, SEGR, latent Defect, post-irradiation-gate-stress, power MOSFET, reliability",

author = "A. Privat and Touboul, {A. D.} and A. Michez and S. Bourdarie and Vaille, {J. R.} and F. Wrobel and N. Chatry and G. Chaumont and E. Lorfevre and F. Bezerra and F. Saigne",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2014",

month = dec,

day = "1",

doi = "10.1109/TNS.2014.2365041",

language = "English (US)",

volume = "61",

pages = "2930--2935",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - On the use of post-irradiation-gate-stress results to refine sensitive operating area determination

AU - Privat, A.

AU - Touboul, A. D.

AU - Michez, A.

AU - Bourdarie, S.

AU - Vaille, J. R.

AU - Wrobel, F.

AU - Chatry, N.

AU - Chaumont, G.

AU - Lorfevre, E.

AU - Bezerra, F.

AU - Saigne, F.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

AB - This paper reports on the different responses observed during heavy ion irradiation and the Post-irradiation-Gate-Stress test on radiation-hardened Power MOSFETs. The data show a correlation between IG gate current during irradiation and different behaviors observed during the post-irradiation test. This work addresses the relevance of the post-gate stress test used in space qualification of power MOSFETs.

KW - Heavy ion

KW - SEGR

KW - latent Defect

KW - post-irradiation-gate-stress

KW - power MOSFET

KW - reliability

UR - http://www.scopus.com/inward/record.url?scp=84919882381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919882381&partnerID=8YFLogxK

U2 - 10.1109/TNS.2014.2365041

DO - 10.1109/TNS.2014.2365041

M3 - Article

AN - SCOPUS:84919882381

SN - 0018-9499

VL - 61

SP - 2930

EP - 2935

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 6

M1 - 6954565

ER -

On the use of post-irradiation-gate-stress results to refine sensitive operating area determination

Abstract

Keywords

ASJC Scopus subject areas

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