TY - JOUR
T1 - On the Use of Monte Carlo Techniques for the Calculation of Transient Dynamic Response in Semiconductors
AU - Ferry, D. K.
AU - Barker, J. R.
PY - 1980/8/1
Y1 - 1980/8/1
N2 - The transient dynamic response in InAs and GaAs is calculated by both, a drifted Maxwellian approach and a Monte Carlo approach. While previous calculations by the latter method yield results that differ from those obtained using the Maxwellian approach, using an ensemble Monte Carlo technique, which is free from errors introduced by velocity estimators, it is found that the results are extremely sensitive to the value of Γ, the self‐scattering parameter. However, when Γ is selected so that <Δt> = 1/Γ « >τ>, comparable results are obtained for the two techniques.
AB - The transient dynamic response in InAs and GaAs is calculated by both, a drifted Maxwellian approach and a Monte Carlo approach. While previous calculations by the latter method yield results that differ from those obtained using the Maxwellian approach, using an ensemble Monte Carlo technique, which is free from errors introduced by velocity estimators, it is found that the results are extremely sensitive to the value of Γ, the self‐scattering parameter. However, when Γ is selected so that <Δt> = 1/Γ « >τ>, comparable results are obtained for the two techniques.
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U2 - 10.1002/pssb.2221000236
DO - 10.1002/pssb.2221000236
M3 - Article
AN - SCOPUS:0019049880
SN - 0370-1972
VL - 100
SP - 683
EP - 689
JO - physica status solidi (b)
JF - physica status solidi (b)
IS - 2
ER -