Ohmic contacts to nitrogen-doped nanocarbon layers on diamond (100) surfaces

Evangeline Amonoo; Vishal Jha; Trevor Thornton; Franz A. Koeck; Robert J. Nemanich; Terry L. Alford

doi:10.1016/j.diamond.2023.109832

Ohmic contacts to nitrogen-doped nanocarbon layers on diamond (100) surfaces

Evangeline Amonoo, Vishal Jha, Trevor Thornton, Franz A. Koeck, Robert J. Nemanich, Terry L. Alford

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on a nitrogen-doped n-type conducting nanocarbon (nanoC) layer grown on a diamond (100) substrate. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values between the electrode and nanoC layer of 8 × 10⁻⁵ Ωcm² were achieved, which is almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon film.

Original language	English (US)
Article number	109832
Journal	Diamond and Related Materials
Volume	135
DOIs	https://doi.org/10.1016/j.diamond.2023.109832
State	Published - May 2023

Keywords

Adhesion
Amorphous
Carbide
Defects
Diamond-like carbon
Diffusion
Electrical conductivity
Electrical properties
Electrode
Grain boundaries
Graphite
Impurities
Light emission
Microstructure
Morphology
N-type doping
Nanocrystalline
Ohmic contacts
Plasma CVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
General Physics and Astronomy
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.diamond.2023.109832

Cite this

@article{100cd79660534c7a8bdfdb19e1b3a9f6,

title = "Ohmic contacts to nitrogen-doped nanocarbon layers on diamond (100) surfaces",

abstract = "The transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on a nitrogen-doped n-type conducting nanocarbon (nanoC) layer grown on a diamond (100) substrate. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values between the electrode and nanoC layer of 8 × 10−5 Ωcm2 were achieved, which is almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon film.",

keywords = "Adhesion, Amorphous, Carbide, Defects, Diamond-like carbon, Diffusion, Electrical conductivity, Electrical properties, Electrode, Grain boundaries, Graphite, Impurities, Light emission, Microstructure, Morphology, N-type doping, Nanocrystalline, Ohmic contacts, Plasma CVD",

author = "Evangeline Amonoo and Vishal Jha and Trevor Thornton and Koeck, {Franz A.} and Nemanich, {Robert J.} and Alford, {Terry L.}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = may,

doi = "10.1016/j.diamond.2023.109832",

language = "English (US)",

volume = "135",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Ohmic contacts to nitrogen-doped nanocarbon layers on diamond (100) surfaces

AU - Amonoo, Evangeline

AU - Jha, Vishal

AU - Thornton, Trevor

AU - Koeck, Franz A.

AU - Nemanich, Robert J.

AU - Alford, Terry L.

PY - 2023/5

Y1 - 2023/5

N2 - The transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on a nitrogen-doped n-type conducting nanocarbon (nanoC) layer grown on a diamond (100) substrate. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values between the electrode and nanoC layer of 8 × 10−5 Ωcm2 were achieved, which is almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon film.

AB - The transfer length method (TLM) was used to investigate Ohmic contact properties using the tri-layer stack Ti/Pt/Au on a nitrogen-doped n-type conducting nanocarbon (nanoC) layer grown on a diamond (100) substrate. Room temperature electrical measurements were taken, and samples were annealed to observe changes in electrical conductivity. Low specific contact resistivity values between the electrode and nanoC layer of 8 × 10−5 Ωcm2 were achieved, which is almost two orders of magnitude lower than previously reported values. The results were attributed to the increased nitrogen incorporation, and the presence of electrically active defects which leads to an increase in conduction in the nanocarbon film.

KW - Adhesion

KW - Amorphous

KW - Carbide

KW - Defects

KW - Diamond-like carbon

KW - Diffusion

KW - Electrical conductivity

KW - Electrical properties

KW - Electrode

KW - Grain boundaries

KW - Graphite

KW - Impurities

KW - Light emission

KW - Microstructure

KW - Morphology

KW - N-type doping

KW - Nanocrystalline

KW - Ohmic contacts

KW - Plasma CVD

UR - http://www.scopus.com/inward/record.url?scp=85149783765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85149783765&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2023.109832

DO - 10.1016/j.diamond.2023.109832

M3 - Article

AN - SCOPUS:85149783765

SN - 0925-9635

VL - 135

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 109832

ER -

Ohmic contacts to nitrogen-doped nanocarbon layers on diamond (100) surfaces

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this