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Ohmic Contacts to GaN
Philip J. Hartlieb
, Robert F. Davis
,
Robert J. Nemanich
Research output
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Chapter in Book/Report/Conference proceeding
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Keyphrases
Ohmic Contact
100%
Contact Structure
50%
Treated Surface
50%
Chemical Vapor
50%
Specific Contact Resistivity
50%
In Situ
25%
Annealing
25%
Band Gap
25%
Structural Characterization
25%
State Model
25%
P-GaN
25%
Chemical Characterization
25%
Electrical Characterization
25%
Band Bending
25%
Surface States
25%
Surface Preparation
25%
Barrier Height
25%
Optoelectronic Applications
25%
Epitaxy
25%
Schottky Barrier
25%
As-grown
25%
Schottky Barrier Height
25%
Surface Contamination
25%
Ion Beam
25%
Pd-based
25%
Contact Interface
25%
Large Grain Size
25%
Surface Following
25%
N-type GaN
25%
Bardeen
25%
Acceptor Doping
25%
Contact Behavior
25%
Ti-based
25%
Ohmic Behavior
25%
Metal-induced Gap States
25%
Ni-based
25%
Surface Electronic Properties
25%
Schottky Metal
25%
Metal-semiconductor Contact
25%
Chemical Basis
25%
Material Science
Electrical Resistivity
100%
Schottky Barrier
100%
Grain Size
50%
Epitaxy
50%
Acceptor Doping
50%
Surface Electronic Property
50%