Abstract
We have experimentally proven the Cerenkov generation of optical phonons by drifting electrons in a semiconductor. We observe an instability of the polar optical phonons in nanoscale semiconductors that occurs when electrons are accelerated to very high velocities by intense electric fields. The instability is observed when the electron drift velocity is larger than the phase velocity of optical phonons and rather resembles a "sonic-boom" for optical phonons. The effect is demonstrated in p-i-n semiconductor nanostructures by using subpicosecond Raman spectroscopy. We suggest that the observed phenomena will have enormous impact on the carrier dynamics in nanoscale semiconductor devices.
Original language | English (US) |
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Pages (from-to) | 174-187 |
Number of pages | 14 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4992 |
DOIs | |
State | Published - May 30 2003 |
Event | Ultrafast Phenomena in Semiconductors VII 2003 - San Jose, United States Duration: Jan 25 2003 → Jan 31 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering