Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Xixiang Feng; Pengpeng Ren; Zhigang Ji; Runsheng Wang; Ketul B. Sutaria; Yu Cao; Ru Huang

doi:10.1109/ICSICT.2014.7021226

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Xixiang Feng
, Pengpeng Ren
, Zhigang Ji
, Runsheng Wang
, Ketul B. Sutaria
, Yu Cao
, Ru Huang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

Original language	English (US)
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021226
State	Published - Jan 23 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: Oct 28 2014 → Oct 31 2014

Other

Other	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	10/28/14 → 10/31/14

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Computer Science Applications

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10.1109/ICSICT.2014.7021226

Cite this

Feng, X., Ren, P., Ji, Z., Wang, R., Sutaria, K. B., Cao, Y., & Huang, R. (2014). Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. In Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021226 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021226

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. / Feng, Xixiang; Ren, Pengpeng; Ji, Zhigang et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7021226.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Feng, X, Ren, P, Ji, Z, Wang, R, Sutaria, KB, Cao, Y & Huang, R 2014, Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. in Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021226, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 10/28/14. https://doi.org/10.1109/ICSICT.2014.7021226

Feng X, Ren P, Ji Z, Wang R, Sutaria KB, Cao Y et al. Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. In Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021226 doi: 10.1109/ICSICT.2014.7021226

@inproceedings{71da5ef390e446f2add0a58fd628dece,

title = "Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation",

abstract = "Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.",

author = "Xixiang Feng and Pengpeng Ren and Zhigang Ji and Runsheng Wang and Sutaria, \{Ketul B.\} and Yu Cao and Ru Huang",

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doi = "10.1109/ICSICT.2014.7021226",

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booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

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AU - Feng, Xixiang

AU - Ren, Pengpeng

AU - Ji, Zhigang

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AU - Sutaria, Ketul B.

AU - Cao, Yu

AU - Huang, Ru

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

AB - Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

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T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

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