Novel uses of TiO2 in crystalline silicon solar cells

Bryce S. Richards, Jeffrey E. Cotter, Christiana B. Honsberg, Stuart R. Wenham

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations


Novel applications for titanium dioxide (TiO2) thin films have the potential to reduce production costs of silicon (Si) solar cells, especially for structures like the buried-contact solar cell. This paper demonstrates several new uses for TiO2 films. Firstly, it is demonstrated that the TiO2 film does not contaminate the silicon wafer or furnace after lengthy high-temperature processing. Secondly, a thin silicon dioxide passivation layer can be grown at the TiO2/Si interface by performing a brief oxidation after the deposition of the TiO2. With this method, very low emitter dark saturation currents have been achieved on lightly-diffused high-resistivity float zone wafers. Thirdly, TiO2 films doped with 1% phosphorus were investigated as an emitter dopant source. Initial results have shown that light diffusions are possible. Finally, the applicability of TiO2 as a phosphorus diffusion barrier was investigated.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780357728
StatePublished - Jan 1 2000
Externally publishedYes
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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