Novel technique to pattern silver using CF4 and CF4/O2 glow discharges

Phucanh Nguyen; Yuxiao Zeng; Terry Alford

doi:10.1116/1.1333080

Novel technique to pattern silver using CF₄ and CF₄/O₂ glow discharges

Phucanh Nguyen, Yuxiao Zeng, Terry Alford

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A novel technique to pattern Ag thin films using CF₄ and CF₄/O₂ glow discharges at low temperatures followed by a resist strip process is proposed. Ag reacts with the reactive species from glow discharge to form byproducts which are simultaneously sputtered and desorped during plasma exposure. The reacted Ag films are dissolved in a warm microstrip solvent for film removal. The effects of process conditions on etch rate and post-etch surface roughness are studied.

Original language	English (US)
Pages (from-to)	158-165
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	1
DOIs	https://doi.org/10.1116/1.1333080
State	Published - Jan 1 2001

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "A novel technique to pattern Ag thin films using CF4 and CF4/O2 glow discharges at low temperatures followed by a resist strip process is proposed. Ag reacts with the reactive species from glow discharge to form byproducts which are simultaneously sputtered and desorped during plasma exposure. The reacted Ag films are dissolved in a warm microstrip solvent for film removal. The effects of process conditions on etch rate and post-etch surface roughness are studied.",

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AB - A novel technique to pattern Ag thin films using CF4 and CF4/O2 glow discharges at low temperatures followed by a resist strip process is proposed. Ag reacts with the reactive species from glow discharge to form byproducts which are simultaneously sputtered and desorped during plasma exposure. The reacted Ag films are dissolved in a warm microstrip solvent for film removal. The effects of process conditions on etch rate and post-etch surface roughness are studied.

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Novel technique to pattern silver using CF₄ and CF₄/O₂ glow discharges

Abstract

ASJC Scopus subject areas

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