Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Houqiang Fu; Xiaodong Zhang; Kai Fu; Hanxiao Liu; Shanthan R. Alugubelli; Xuanqi Huang; Hong Chen; Izak Baranowski; Tsung Han Yang; Ke Xu; Fernando Ponce; Baoshun Zhang; Yuji Zhao

doi:10.7567/APEX.11.111003

Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Houqiang Fu, Xiaodong Zhang, Kai Fu, Hanxiao Liu, Shanthan R. Alugubelli, Xuanqi Huang, Hong Chen, Izak Baranowski, Tsung Han Yang, Ke Xu, Fernando Ponce, Baoshun Zhang, Yuji Zhao

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm², and high on/off ratio of 10¹⁰. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

Original language	English (US)
Article number	111003
Journal	Applied Physics Express
Volume	11
Issue number	11
DOIs	https://doi.org/10.7567/APEX.11.111003
State	Published - Nov 2018

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Fu, H., Zhang, X., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Baranowski, I., Yang, T. H., Xu, K., Ponce, F., Zhang, B., & Zhao, Y. (2018). Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates. Applied Physics Express, 11(11), Article 111003. https://doi.org/10.7567/APEX.11.111003

Fu, H, Zhang, X, Fu, K, Liu, H, Alugubelli, SR, Huang, X, Chen, H, Baranowski, I, Yang, TH, Xu, K, Ponce, F, Zhang, B & Zhao, Y 2018, 'Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates', Applied Physics Express, vol. 11, no. 11, 111003. https://doi.org/10.7567/APEX.11.111003

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title = "Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN={"}MIDDLE{"} ALT={"}$(10\bar{1}0)${"} SRC={"}AP180752if001.gif{"}/ m-plane GaN substrates",

abstract = "We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.",

author = "Houqiang Fu and Xiaodong Zhang and Kai Fu and Hanxiao Liu and Alugubelli, {Shanthan R.} and Xuanqi Huang and Hong Chen and Izak Baranowski and Yang, {Tsung Han} and Ke Xu and Fernando Ponce and Baoshun Zhang and Yuji Zhao",

note = "Funding Information: Acknowledgments This study was supported by the ARPA-E PNDI-ODES Program monitored by Dr. Isik Kizilyalli. We acknowledge the use of facilities within the Eyring Materials Center at the Arizona State University. Access to the NanoFab and=or EMC was supported, in part, by NSF award number NNCI-1542160. Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = nov,

doi = "10.7567/APEX.11.111003",

language = "English (US)",

volume = "11",

journal = "Applied Physics Express",

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T1 - Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

AU - Fu, Houqiang

AU - Zhang, Xiaodong

AU - Fu, Kai

AU - Liu, Hanxiao

AU - Alugubelli, Shanthan R.

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Baranowski, Izak

AU - Yang, Tsung Han

AU - Xu, Ke

AU - Ponce, Fernando

AU - Zhang, Baoshun

AU - Zhao, Yuji

N1 - Funding Information: Acknowledgments This study was supported by the ARPA-E PNDI-ODES Program monitored by Dr. Isik Kizilyalli. We acknowledge the use of facilities within the Eyring Materials Center at the Arizona State University. Access to the NanoFab and=or EMC was supported, in part, by NSF award number NNCI-1542160. Publisher Copyright: © 2018 The Japan Society of Applied Physics.

PY - 2018/11

Y1 - 2018/11

N2 - We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

AB - We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

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Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

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