TY - GEN
T1 - Nonlinearity enhancement by positive pulse stress in multilevel cell selectorless RRAM applications
AU - Chen, Ying Chen
AU - Wu, Xiaohan
AU - Chang, Yao Feng
AU - Lee, Jack C.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - Resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a great deal of attention since the current nonvolatile memory (NVM) has been approaching the scaling limits. Meanwhile, the undesired sneak current through neighboring unselected cells deteriorates the read margin and limits the maximum size of a crossbar array (i.e. read margin ~ 10%) [3]-[4]. And the selector devices have been used to resolve the sneak path current issue. However, the additional selector device in the so-called 1S-1R architecture (i.e. one selector-one resistor -Fig. 1 (a)) increases the cell size, process complexity, and cost. In this work, a nonlinear (NL) resistive switching (RS) in a multilevel lR-only selectorless RRAM cell has been demonstrated by using a graphite-based stacked RRAM device.
AB - Resistive random access memory (RRAM) using various metal oxides (i.e., SiO2[1], HfO2, NiO[2], Al2O3, NbO) have attracted a great deal of attention since the current nonvolatile memory (NVM) has been approaching the scaling limits. Meanwhile, the undesired sneak current through neighboring unselected cells deteriorates the read margin and limits the maximum size of a crossbar array (i.e. read margin ~ 10%) [3]-[4]. And the selector devices have been used to resolve the sneak path current issue. However, the additional selector device in the so-called 1S-1R architecture (i.e. one selector-one resistor -Fig. 1 (a)) increases the cell size, process complexity, and cost. In this work, a nonlinear (NL) resistive switching (RS) in a multilevel lR-only selectorless RRAM cell has been demonstrated by using a graphite-based stacked RRAM device.
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U2 - 10.1109/DRC.2018.8442232
DO - 10.1109/DRC.2018.8442232
M3 - Conference contribution
AN - SCOPUS:85053192145
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -