Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

Yuto Ando; Frank Mehnke; Henri Bouchard; Zhiyu Xu; Alec M. Fischer; Shyh Chiang Shen; Fernando A. Ponce; Theeradetch Detchprohm; Russell D. Dupuis

doi:10.1016/j.jcrysgro.2023.127100

Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

Yuto Ando, Frank Mehnke, Henri Bouchard, Zhiyu Xu, Alec M. Fischer, Shyh Chiang Shen, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Non-planar growth of Al_xGa_1-_xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.

Original language	English (US)
Article number	127100
Journal	Journal of Crystal Growth
Volume	607
DOIs	https://doi.org/10.1016/j.jcrysgro.2023.127100
State	Published - Apr 1 2023

Keywords

A3. Low pressure metalorganic vapor phase epitaxy
A3. Metalorganic chemical vapor deposition
A3. Superlattices
B1. Nitrides
B2. Semiconducting III-V materials
B3. Laser diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2023.127100

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Ando, Y., Mehnke, F., Bouchard, H., Xu, Z., Fischer, A. M., Shen, S. C., Ponce, F. A., Detchprohm, T., & Dupuis, R. D. (2023). Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness. Journal of Crystal Growth, 607, Article 127100. https://doi.org/10.1016/j.jcrysgro.2023.127100

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title = "Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness",

abstract = "Non-planar growth of AlxGa1-xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.",

keywords = "A3. Low pressure metalorganic vapor phase epitaxy, A3. Metalorganic chemical vapor deposition, A3. Superlattices, B1. Nitrides, B2. Semiconducting III-V materials, B3. Laser diodes",

author = "Yuto Ando and Frank Mehnke and Henri Bouchard and Zhiyu Xu and Fischer, {Alec M.} and Shen, {Shyh Chiang} and Ponce, {Fernando A.} and Theeradetch Detchprohm and Dupuis, {Russell D.}",

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year = "2023",

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doi = "10.1016/j.jcrysgro.2023.127100",

language = "English (US)",

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T1 - Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

AU - Ando, Yuto

AU - Mehnke, Frank

AU - Bouchard, Henri

AU - Xu, Zhiyu

AU - Fischer, Alec M.

AU - Shen, Shyh Chiang

AU - Ponce, Fernando A.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Non-planar growth of AlxGa1-xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.

AB - Non-planar growth of AlxGa1-xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.

KW - A3. Low pressure metalorganic vapor phase epitaxy

KW - A3. Metalorganic chemical vapor deposition

KW - A3. Superlattices

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

KW - B3. Laser diodes

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DO - 10.1016/j.jcrysgro.2023.127100

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VL - 607

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

M1 - 127100

ER -

Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

Abstract

Keywords

ASJC Scopus subject areas

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