@article{ba17af57478b4ee88545c4eefb530a2b,
title = "Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness",
abstract = "Non-planar growth of AlxGa1-xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.",
keywords = "A3. Low pressure metalorganic vapor phase epitaxy, A3. Metalorganic chemical vapor deposition, A3. Superlattices, B1. Nitrides, B2. Semiconducting III-V materials, B3. Laser diodes",
author = "Yuto Ando and Frank Mehnke and Henri Bouchard and Zhiyu Xu and Fischer, {Alec M.} and Shen, {Shyh Chiang} and Ponce, {Fernando A.} and Theeradetch Detchprohm and Dupuis, {Russell D.}",
note = "Funding Information: R. D. Dupuis acknowledges the support of the Steve W. Chaddick Endowed Chair in Optoelectronics and F. Mehnke, and Y. Ando were supported by the Steve W. Chaddick Fellowship. A. M. Fischer was supported as part of the Ultra Materials for a Resilient, Smart Electricity Grid (ULTRA), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Basic Energy Sciences at the Arizona State University under award #DE-SC0021230. This work was performed in part in the facilities of the Georgia Tech Institute for Electronics and Nanotechnology, a member of the National Nanotechnology Coordinated Infrastructure, which is supported by the National Science Foundation (Grant ECCS-154217). The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either express or implied, of DoE, NSF or the U.S. Government. Publisher Copyright: {\textcopyright} 2023",
year = "2023",
month = apr,
day = "1",
doi = "10.1016/j.jcrysgro.2023.127100",
language = "English (US)",
volume = "607",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
}