Abstract
Non-planar growth of AlxGa1-xN epitaxial layers with an average alloy composition up to Al-mole-fraction of x ∼ 0.21 was performed on patterned c-plane GaN on (0001) sapphire substrates with stripe-shaped mesa structures. This approach successfully realized the growth of crack-free AlGaN layers on the top of mesas with layer thicknesses greater than the expected critical layer thickness by relaxing the in-plane stress on the top of the mesa. The effectiveness of the relaxation strongly depends on the width and depth of the stripe mesa. The relaxation of in-plane stress and resultant suppression of cracks in AlGaN layer are qualitatively discussed.
Original language | English (US) |
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Article number | 127100 |
Journal | Journal of Crystal Growth |
Volume | 607 |
DOIs | |
State | Published - Apr 1 2023 |
Keywords
- A3. Low pressure metalorganic vapor phase epitaxy
- A3. Metalorganic chemical vapor deposition
- A3. Superlattices
- B1. Nitrides
- B2. Semiconducting III-V materials
- B3. Laser diodes
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry