Nitride-based thin-film cold cathode emitters

J. A. Christman, A. T. Sowers, M. D. Bremser, B. L. Ward, F. Davis, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Cold cathodes have been fabricated using two different nitride structures as a thin film emitting layer. The AlN and graded AlGaN structures are prepared by metallorganic chemical vapor deposition (MOCVD) on an n-type 6H-SiC substrate. Individual aluminum grids are perforated with an array of either 1, 3, or 5μm holes through which the emitting surface is exposed. After device fabrication, a hydrogen plasma exposure was found to be necessary to activate the cathode. The devices have displayed a limited lifetime and a small percentage of the devices operate, although half of the devices with 5μm holes functioned. The highest measured collector currents are 0. 1μA for AlN and 10nA for AlGaN at grid voltages of 110V and 20V, respectively. The grid currents are typically 10 to 10 4 times the collector currents.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Number of pages6
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 6 1996


OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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