Nitride based Schottky-barrier photovoltaic devices

Balakrishnam R. Jampana, Omkar K. Jani, Yu Hongbo, Ian T. Ferguson, Brian E. McCandless, Steven S. Hegedus, Robert L. Opila, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Schottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600°C to 650°C Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.

Original languageEnglish (US)
Title of host publicationNitrides and Related Bulk Materials
Number of pages6
StatePublished - 2008
Externally publishedYes
Event2007 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 26 2007Nov 30 2007

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2007 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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