Ni on Si(111): Reactivity and interface structure

N. W. Cheung; R. J. Culbertson; L. C. Feldman; P. J. Silverman; K. W. West; J. W. Mayer

doi:10.1103/PhysRevLett.45.120

Ni on Si(111): Reactivity and interface structure

N. W. Cheung
, R. J. Culbertson
, L. C. Feldman
, P. J. Silverman
, K. W. West
, J. W. Mayer

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

Original language	English (US)
Pages (from-to)	120-124
Number of pages	5
Journal	Physical Review Letters
Volume	45
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.45.120
State	Published - Jan 1 1980
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.45.120

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title = "Ni on Si(111): Reactivity and interface structure",

abstract = "The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.",

author = "Cheung, \{N. W.\} and Culbertson, \{R. J.\} and Feldman, \{L. C.\} and Silverman, \{P. J.\} and West, \{K. W.\} and Mayer, \{J. W.\}",

year = "1980",

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doi = "10.1103/PhysRevLett.45.120",

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T2 - Reactivity and interface structure

AU - Cheung, N. W.

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AU - Feldman, L. C.

AU - Silverman, P. J.

AU - West, K. W.

AU - Mayer, J. W.

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

AB - The megaelectronvolt ion-channeling technique has been applied to the study of the Ni-Si interface. The Ni-Si interface, prepared under UHV conditions at ambient temperature, shows an interfacial region containing 1×1016 atoms/cm2 of nonregistered Si. A measurement of the temperature dependence of the interfacial reactivity emphasizes the kinetic nature of the Ni-Si interface and the importance of Schottky-barrier height measurements at low temperatures for meaningful comparison with abrupt metal-semicon-ductor interface models.

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Ni on Si(111): Reactivity and interface structure

Abstract

ASJC Scopus subject areas

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