New shallow acceptor levels in GaAs

B. J. Skromme; S. S. Bose; G. E. Stillman

doi:10.1007/BF02661883

New shallow acceptor levels in GaAs

B. J. Skromme, S. S. Bose, G. E. Stillman

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.

Original language	English (US)
Pages (from-to)	345-348
Number of pages	4
Journal	Journal of Electronic Materials
Volume	15
Issue number	6
DOIs	https://doi.org/10.1007/BF02661883
State	Published - Nov 1 1986
Externally published	Yes

Keywords

Gallium Arsenide (GaAs)
metalorganic chemical
photoluminescence.
shallow acceptors
vapor deposition
vapor-phase epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02661883

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title = "New shallow acceptor levels in GaAs",

abstract = "Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.",

keywords = "Gallium Arsenide (GaAs), metalorganic chemical, photoluminescence., shallow acceptors, vapor deposition, vapor-phase epitaxy",

author = "Skromme, {B. J.} and Bose, {S. S.} and Stillman, {G. E.}",

year = "1986",

month = nov,

day = "1",

doi = "10.1007/BF02661883",

language = "English (US)",

volume = "15",

pages = "345--348",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "6",

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TY - JOUR

T1 - New shallow acceptor levels in GaAs

AU - Skromme, B. J.

AU - Bose, S. S.

AU - Stillman, G. E.

PY - 1986/11/1

Y1 - 1986/11/1

N2 - Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.

AB - Two previously unreported shallow acceptor levels with ionization energies of 25.2 and 43.2 meV, respectively, have been observed in a number of vapor phase epitaxial and metalorganic chemical vapor deposited GaAs samples grown in several different laboratories. The corresponding donor-to-acceptor and conduction band-to-acceptor transitions are identified in low temperature photoluminescence spectra by means of their temperature and excitation intensity-dependence. These levels are present as residual acceptors in high purity material, but their chemical and/or metallurgical nature has not yet been determined.

KW - Gallium Arsenide (GaAs)

KW - metalorganic chemical

KW - photoluminescence.

KW - shallow acceptors

KW - vapor deposition

KW - vapor-phase epitaxy

UR - http://www.scopus.com/inward/record.url?scp=0022807493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022807493&partnerID=8YFLogxK

U2 - 10.1007/BF02661883

DO - 10.1007/BF02661883

M3 - Article

AN - SCOPUS:0022807493

SN - 0361-5235

VL - 15

SP - 345

EP - 348

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

New shallow acceptor levels in GaAs

Abstract

Keywords

ASJC Scopus subject areas

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