Negative differential conductance observed in a lateral double constriction device

J. C. Wu; M. N. Wybourne; C. Berven; S. M. Goodnick; Doran D. Smith

doi:10.1063/1.108186

Negative differential conductance observed in a lateral double constriction device

J. C. Wu, M. N. Wybourne, C. Berven, S. M. Goodnick, Doran D. Smith

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

Original language	English (US)
Pages (from-to)	2425-2427
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	20
DOIs	https://doi.org/10.1063/1.108186
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.108186

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@article{c049b956668a423dbb80cc8e20f54f5b,

title = "Negative differential conductance observed in a lateral double constriction device",

abstract = "Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.",

author = "Wu, {J. C.} and Wybourne, {M. N.} and C. Berven and Goodnick, {S. M.} and Smith, {Doran D.}",

year = "1992",

doi = "10.1063/1.108186",

language = "English (US)",

volume = "61",

pages = "2425--2427",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

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T1 - Negative differential conductance observed in a lateral double constriction device

AU - Wu, J. C.

AU - Wybourne, M. N.

AU - Berven, C.

AU - Goodnick, S. M.

AU - Smith, Doran D.

PY - 1992

Y1 - 1992

N2 - Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

AB - Lateral double point contact devices were fabricated using a split-gate high electron mobility transistor. The low-temperature source-drain characteristics show pronounced S-shaped negative differential conductance that can be independently controlled by an applied gate bias. The mechanism for the observed switching behavior is believed to be similar to that proposed for heterostructure hot electron diodes.

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U2 - 10.1063/1.108186

DO - 10.1063/1.108186

M3 - Article

AN - SCOPUS:0001544616

SN - 0003-6951

VL - 61

SP - 2425

EP - 2427

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Negative differential conductance observed in a lateral double constriction device

Abstract

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