Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation

X. J. Chen, Hugh Barnaby, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, D. G. Platteter, G. W. Dunham

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


The buildup of radiation-induced switching states in ELDRS-sensitive bipolar base oxides is measured with dc current-voltage and charge pumping techniques. These states include both faster interface traps (Pb) centers) and slower border traps. After irradiation, border traps and interface traps mostly decrease with annealing time and temperature in devices irradiated at 0 V. However, for devices irradiated at -50 V, there is a decrease in border trap density but an increase in interface trap density. These differences in interface-trap buildup and annealing are attributed to the dependence of defect passivation and depassivation on the concentrations of hydrogen and dangling Si bond defects near the Si/SiO2 interface.

Original languageEnglish (US)
Pages (from-to)3649-3654
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 2006


  • Bipolar junction transistors
  • Border traps
  • Charge pumping
  • Interface traps

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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