Nanoscale effects in devices based on chalcogenide solid solutions

Michael Kozicki; M. Yun; S. J. Yang; J. P. Aberouette; J. P. Bird

doi:10.1006/spmi.2000.0827

Nanoscale effects in devices based on chalcogenide solid solutions

Michael Kozicki, M. Yun, S. J. Yang, J. P. Aberouette, J. P. Bird

Research output: Contribution to journal › Conference article › peer-review

21 Scopus citations

Abstract

Solid solutions of metals such as silver in arsenic trisulfide exhibit a variety of interesting characteristics, including the ability to bring the metal out of solution by electrodeposition. This allows voltage-controlled switching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits may be formed and subsequently broken at grain boundaries to create structures that have adjustable current-voltage characteristics at low temperatures. This paper highlights some initial results of the characterization of nanoscale structures based on such solid solutions.

Original language	English (US)
Pages (from-to)	485-488
Number of pages	4
Journal	Superlattices and Microstructures
Volume	27
Issue number	5
DOIs	https://doi.org/10.1006/spmi.2000.0827
State	Published - May 2000
Event	3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA Duration: Dec 6 1999 → Dec 10 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2000.0827

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title = "Nanoscale effects in devices based on chalcogenide solid solutions",

abstract = "Solid solutions of metals such as silver in arsenic trisulfide exhibit a variety of interesting characteristics, including the ability to bring the metal out of solution by electrodeposition. This allows voltage-controlled switching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits may be formed and subsequently broken at grain boundaries to create structures that have adjustable current-voltage characteristics at low temperatures. This paper highlights some initial results of the characterization of nanoscale structures based on such solid solutions.",

author = "Michael Kozicki and M. Yun and Yang, {S. J.} and Aberouette, {J. P.} and Bird, {J. P.}",

year = "2000",

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note = "3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) ; Conference date: 06-12-1999 Through 10-12-1999",

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AU - Kozicki, Michael

AU - Yun, M.

AU - Yang, S. J.

AU - Aberouette, J. P.

AU - Bird, J. P.

PY - 2000/5

Y1 - 2000/5

N2 - Solid solutions of metals such as silver in arsenic trisulfide exhibit a variety of interesting characteristics, including the ability to bring the metal out of solution by electrodeposition. This allows voltage-controlled switching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits may be formed and subsequently broken at grain boundaries to create structures that have adjustable current-voltage characteristics at low temperatures. This paper highlights some initial results of the characterization of nanoscale structures based on such solid solutions.

AB - Solid solutions of metals such as silver in arsenic trisulfide exhibit a variety of interesting characteristics, including the ability to bring the metal out of solution by electrodeposition. This allows voltage-controlled switching characteristics to be realized in two terminal devices which may be fabricated to nanoscale dimensions. In addition, surface electrodeposits may be formed and subsequently broken at grain boundaries to create structures that have adjustable current-voltage characteristics at low temperatures. This paper highlights some initial results of the characterization of nanoscale structures based on such solid solutions.

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DO - 10.1006/spmi.2000.0827

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VL - 27

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EP - 488

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

T2 - 3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99)

Y2 - 6 December 1999 through 10 December 1999

ER -

Nanoscale effects in devices based on chalcogenide solid solutions

Abstract

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