Nanopore patterning using Al<inf>2</inf>O<inf>3</inf> hard masks on SOI substrates

Keyphrases

• Al2O3 Oxide 20%
• Al2O3 Thin Films 20%
• Alumina Layer 20%
• Aluminum Oxide 100%
• Anisotropy 20%
• Ar-Ar 20%
• Atomic Layer Deposition 20%
• Boron Trichloride 60%
• Buried Oxide 20%
• Chlorine Chemistry 20%
• Device Layer 40%
• Dry Etching 20%
• Etch Profile 20%
• Etch Selectivity 40%
• Etching Rate 20%
• Gas Chemistry 20%
• Hard Mask 100%
• High Aspect Ratio 20%
• Inductively Coupled Plasma Reactive Ion Etching 20%
• Insulator Substrate 100%
• Nanofluidics 20%
• Nanopatterning 40%
• Nanopore 100%
• Pattern Dimension 20%
• PMMA Resist 20%
• Si Devices 40%
• Silica 20%
• Silicon-on-insulator 100%
• Sub-100 Nm 40%

Material Science

• Al2O3 100%
• Aluminum Oxide 60%
• Anisotropy 20%
• Dry Etching 20%
• Nanofluidics 20%
• Nanopore 100%
• Oxide Compound 20%
• Poly Methyl Methacrylate 40%
• Reactive Ion Etching 20%
• Silicon 100%
• Thin Films 20%